Friday, October 24, 2008 3:05 – 3:30 pm
Room 610, M&M Building
Department of Materials Science and Engineering
Michigan Technological University
The impact of the crystal structure on the dielectric properties of the PMN-30%PTthin films has not been investigated. This is due in part to a lack of knowledge onhow to promote one crystal structure by modifying the growth conditions. Bygrowing at low temperature (250ºC) and subsequently rapid thermal annealing at850 ºC, we have observed that PMN-30%PT thin films results in a single crystalperovskite phase. In contrast, a high temperature (900ºC) deposition ofPMN-30%PT on CeO2 buffered sapphire (Al2O3) results in a single crystalpyrochlore phase. X-ray diffraction scans were performed to investigate the phaseand degree of crystallinity of the PMN-PT thin films. These films will allow aninvestigation of how crystal structure impacts the dielectric properties of the singlecrystal PMN-PT thin films.