Friday, November 20, 2009 3:30 – 3:50 pm
Room 610, M&M Building
Chee Huei Lee
Department of Physics
Michigan Technological University
Boron nitride nanotubes (BNNTs) are wide bandgap semiconductors (theoretical value of ~5.5eV), in which the bandgap is insensitive to the number of walls, diameters as well as chiralities.They are potential useful in deep-UV optoelectronic devices, high temperature electronic,nanocomposites, clinical boron neutron capture therapy, and so on. However, the synthesis of BNNTs is challenging, compared to that of carbon nanotubes (CNTs).The chemistry of the process is more involved and usually requires high temperature. We showthat effective growth of high quality BNNTs can be obtained in our lab by a simple thermalchemical vapor deposition technique (Thermal-CVD) at 1200°C, with growth vapor trappingapproach. Furthermore, it is found that the BNNT films can achieve superhydrophobic state with the watercontact angle exceeding 150 degree. Some experiment results will be presented during theseminar. Since BNNTs are chemically inert and resistive to oxidation up to 1000°C, itssuperhydrophobic behavior could be potentially useful as self-cleaning, insulating andanticorrosive coating under rigorous chemical and thermal conditions.