Friday, September 18, 2009 3:00 – 4:00 pm
Room 610, M&M Building
Jong K. Lee
Department of Materials Science and Engineering
Michigan Technological University
A new model for the critical thickness of amorphous metallic thin films isproposed in which the surface free energy difference, Δγ, equals γCV +γCA – γAV, where γCV is the crystalline-vapor, γCA the crystallineamorphous, and γAV, the amorphous-vapor interface free energy. It ispredicated upon experimental evidence that non-epitaxial film growthdue to large atomic-size difference dictates one or two amorphousatomic layers in contact with the substrate phase. Consequently, themodel does not require hardly-accessible film-substrate interface freeenergies in predicting the critical thickness for amorphous-crystallinetransition.
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