Jianhui Yue (SAS) has been awarded a 3-year NSF grant with a total budget of $176,876. One PhD student will be supported for two years. The project is titled “Improving Reliability of In-Memory Storage”. The project addresses two challenges of in-memory storage: 1) Memory cells have limited write endurance (i.e., the total number of program/erase cycles per cell), and 2) Nonvolatile memory has to remain in a consistent state in the event of a system crash or power loss. This project will take a holistic approach, spanning from low-level architecture design to high-level OS management, to optimize the reliability, performance, and manageability of in-memory storage.